FDC6303N Datasheet (Fairchild Semiconductor)

FDC6303N, Dual N-Channel Digital FET

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage a

FDC6303N Features

* 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 Ω @ VGS = 2.7 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHx