FDC6303N Datasheet (onsemi) - Dual N-Channel Digital FET

FDC6303N, Dual N-Channel Digital FET

These dual N *Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance.

This device has been designed especially for

FDC6303N Features

* 25 V, 0.68 A Continuous, 2 A Peak

* RDS(on) = 0.6 W @ VGS = 2.7 V

* RDS(on) = 0.45 W @ VGS= 4.5 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1.5 V

* Gate

* Source Zener for ESD Ruggedness, >6 kV Human