FDC608PZ-F171, FDC608PZ - P-Channel MOSFET

ON Semiconductor

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FDC608PZ-F171 Datasheet Preview — This datasheet PDF includes multiple part numbers: FDC608PZ-F171, FDC608PZ. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	FDC608PZ-F171, FDC608PZ
Manufacturer	ON Semiconductor
File Size	328.41 KB
Description	P-Channel MOSFET
Datasheet	FDC608PZ-ONSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: FDC608PZ-F171, FDC608PZ. Please refer to the document for exact specifications by model.

FDC608PZ-F171 Product details

Description

This P Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. dc conversions.

Features

5.8 A,.
20 V. RDS(ON) = 30 mW @ VGS =.
4.5 V RDS(ON) = 43 mW @ VGS =.
2.5 V.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(ON).
SuperSOT TM.
6 Package: Small Footprint (72% Smaller than Standard SO.
8) Low Profile (1 mm Thick).
These Devices are Pb.
Free and Halide Free.

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Published: Jan 24, 2023 |