PBHV2160Z datasheet, transistor equivalent, nexperia

Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High collector current capability
* High collector current gain hFE at high IC 3. Applications
* Elec.

Application

* Electronic ballast for fluorecent lighting
* LED driver for LED chain module
* LCD backlighting
* HID .

Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits
* Low collector-emitter saturation volta.

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