PBHV8115T-Q
PBHV8115T-Q is 1A NPN high-voltage low VCEsat transistor manufactured by Nexperia.
description
NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP plement: PBHV9115T-Q.
2. Features and benefits
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (h FE) at high IC
- Small SMD plastic package
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- LED driver for LED chain module
- LCD backlighting
- High Intensity Discharge (HID) front lighting
- Automotive motor management
- Hook switch for wired tele
- Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current h FE
DC current gain
Conditions open base
VCE = 10 V; IC = 50 m A; Tamb = 25 °C
Min Typ Max Unit
- -
150 V
- -
100 250
- Nexperia
150 V, 1 A NPN high-voltage low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
B...
