Part PBHV8115T-Q
Description 1A NPN high-voltage low VCEsat transistor
Category Transistor
Manufacturer Nexperia
Size 261.88 KB
PBHV8115T-Q Datasheet (PDF) Download
Pricing from 0.13761 USD, available from DigiKey and TME.
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Nexperia

PBHV8115T-Q Overview

Key Specifications

Description

NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T-Q.

Key Features

  • High voltage
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • Small SMD plastic package
  • Qualified according to AEC-Q101 and recommended for use in automotive applications
PBHV8115T-Q datasheet preview

Price & Availability

Seller Inventory Price Breaks Buy
DigiKey 0 3000+ : 0.13761 USD
6000+ : 0.12554 USD
9000+ : 0.11938 USD
15000+ : 0.11246 USD		 View Offer
TME 0 1+ : 0.633 EUR
10+ : 0.422 EUR
100+ : 0.249 EUR		 View Offer

Related Datasheets

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PBHV8115T NXP Semiconductors 1A NPN high-voltage low VCEsat (BISS) transistor
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PBHV8118T NXP Semiconductors 1 A NPN high-voltage low VCEsat(BISS) transistor