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PBHV8115T-Q - 1A NPN high-voltage low VCEsat transistor

Description

NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9115T-Q.

2.

Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • Small SMD plastic package.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number PBHV8115T-Q
Manufacturer Nexperia
File Size 261.88 KB
Description 1A NPN high-voltage low VCEsat transistor
Datasheet download datasheet PBHV8115T-Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBHV8115T-Q 150 V, 1 A NPN high-voltage low VCEsat transistor 16 March 2022 Product data sheet 1. General description NPN high-voltage low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • Small SMD plastic package • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4.
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