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PBHV8115X - NPN Transistor

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9115X.

2.

Key Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • AEC-Q101 qualified.
  • Medium power SMD plastic package 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT89 PBHV8115X 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 9 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • AEC-Q101 qualified • Medium power SMD plastic package 3. Applications • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4.