PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBHV3160Z 600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor 18 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In ...
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et 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability IC • High collector current gain hFE at high IC • AEC-Q101 qualified 3. Applications • Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data
PBHV3160Z Datasheet
