PBHV8115T datasheet, transistor equivalent, NXP Semiconductors

PBHV8115T transistor equivalent, 1a npn high-voltage low vcesat (biss) transistor.

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Features and benefits

I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q10.

Application

I I I I I I www.DataSheet4U.com LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front l.

Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. 1.2 Features I I I I I I High voltage Low collector-emitter saturation vo.

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