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PBHV8140Z - NPN Transistor

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9540Z.

Key Features

  • High voltage.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • AEC-Q101 qualified.
  • Medium power SMD plastic package 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9540Z. 1.2 Features „ High voltage „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ AEC-Q101 qualified „ Medium power SMD plastic package 1.3 Applications „ LED driver for LED chain module „ LCD backlighting „ Automotive motor management „ Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1.