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PBHV8115Z Datasheet, NXP Semiconductors

PBHV8115Z transistor equivalent, 1a npn high-voltage low vcesat (biss) transistor.

PBHV8115Z Avg. rating / M : 1.0 rating-12

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PBHV8115Z Datasheet

Features and benefits

I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q10.

Application

I I I I I I www.DataSheet4U.com LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front l.

Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z. 1.2 Features I I I I I I High voltage Low collector-emitter saturati.

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TAGS

PBHV8115Z
NPN
high-voltage
low
VCEsat
BISS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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