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PBHV8115TLH Datasheet Preview

PBHV8115TLH Datasheet

NPN Transistor

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PBHV8115TLH
150 V, 1 A NPN high-voltage low VCEsat BISS transistor
10 January 2017
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115TLH
2. Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Small SMD plastic package
AEC-Q101 qualified
3. Applications
Power management
LCD backlighting
LED driver for LED chain module
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
hFE DC current gain
Conditions
open base
single pulse; tp ≤ 1 ms
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit
- - 150 V
--
--
70 -
1A
2A
300




nexperia

PBHV8115TLH Datasheet Preview

PBHV8115TLH Datasheet

NPN Transistor

No Preview Available !

NXP Semiconductors
PBHV8115TLH
150 V, 1 A NPN high-voltage low VCEsat BISS transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 E emitter
3 C collector
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV8115TLH
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
7. Marking
Table 4. Marking codes
Type number
PBHV8115TLH
[1] % = placeholder for manufacturing site code
Marking code[1]
FB%
PBHV8115TLH
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
2 / 14


Part Number PBHV8115TLH
Description NPN Transistor
Maker nexperia
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