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nexperia

PBHV8115X Datasheet Preview

PBHV8115X Datasheet

NPN Transistor

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PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
9 December 2013
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115X.
2. Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
Medium power SMD plastic package
3. Applications
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit
- - 150 V
--1
100 250 -
A
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nexperia

PBHV8115X Datasheet Preview

PBHV8115X Datasheet

NPN Transistor

No Preview Available !

NXP Semiconductors
PBHV8115X
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 C collector
3 B base
Simplified outline
321
SOT89
Graphic symbol
2
3
1
sym042
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV8115X
SOT89
Description
Version
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4. Marking codes
Type number
PBHV8115X
Marking code
[1]
%4F
[1] % = placeholder for manufacturing site code
PBHV8115X
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2013
© NXP N.V. 2013. All rights reserved
2 / 14


Part Number PBHV8115X
Description NPN Transistor
Maker nexperia
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