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PBHV3160Z Datasheet Preview

PBHV3160Z Datasheet

PNP Transistor

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PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
18 August 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC
High collector current gain hFE at high IC
AEC-Q101 qualified
3. Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
HID front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = -10 V; IC = -10 mA; Tamb = 25 °C
Min Typ Max Unit
- - -600 V
- - -0.1 A
70 130 -




nexperia

PBHV3160Z Datasheet Preview

PBHV3160Z Datasheet

PNP Transistor

No Preview Available !

Nexperia
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 C collector
3 E emitter
4 C collector
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
2, 4
1
3
sym028
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV3160Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
PBHV3160Z
Marking code
HV316Z
PBHV3160Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 August 2014
© Nexperia B.V. 2017. All rights reserved
2 / 14


Part Number PBHV3160Z
Description PNP Transistor
Maker nexperia
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