PBHV3160Z
PBHV3160Z is PNP Transistor manufactured by Nexperia.
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
18 August 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC
- High collector current gain h FE at high IC
- AEC-Q101 qualified
3. Applications
- Electronic ballast for fluorescent lighting
- LED driver for LED chain module
- LCD backlighting
- HID front lighting
- Automotive motor management
- Hook switch for wired tele
- Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Symbol VCEO
IC h FE
Quick reference data Parameter collector-emitter voltage collector current
DC current gain
Conditions open base
VCE = -10 V; IC = -10 m A; Tamb = 25 °C
Min Typ Max Unit
- - -600 V
- - -0.1 A 70 130
-...
