PBHV3160Z datasheet, transistor equivalent, nexperia

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datasheet Download (Size : 687.66KB)

Features and benefits

* High voltage
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC
* High collector current gain hFE at high IC
*.

Application

* Electronic ballast for fluorescent lighting
* LED driver for LED chain module
* LCD backlighting
* HID.

Description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits
* High voltage
* Low collector-emitter saturation voltage VCEs.

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