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PBHV2160Z Datasheet, NXP

PBHV2160Z transistor equivalent, npn high-voltage low vcesat (biss) transistor.

PBHV2160Z Avg. rating / M : 1.0 rating-13

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PBHV2160Z Datasheet

Features and benefits


* Low collector-emitter saturation voltage VCEsat
* High collector current capability
* High collector current gain hFE at high IC 3. Applications
* Elec.

Application


* Electronic ballast for fluorecent lighting
* LED driver for LED chain module
* LCD backlighting
* HID .

Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits
* Low collector-emitter saturation volta.

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TAGS

PBHV2160Z
NPN
high-voltage
low
VCEsat
BISS
transistor
PBHV3160Z
PBHV8115T
PBHV8115T-Q
NXP

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