WFD2N60B - Silicon N-Channel MOSFET

Winsemi

General Description

Silicon N-Channel MOSFET

Key Features

2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 5.3nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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WFD2N60B silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFD2N60B
Manufacturer	Winsemi
File Size	292.53 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFD2N60B Datasheet

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WFD2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .