WFD4N60
Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge : 15 n C (Typ.)
- BVDSS=600V,ID=4A
- Lower RDS(on) : 2.5Ω (Max) @VG=10V
- 100% Avalanche Tested
TO‐252
TO‐251
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
VGS EAS IAR PD TJ,TSTG
Parameter
Drain-Sourse Voltage
Drain Current -continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
WFU/D4N60
600 4 1.8
±30 240
4 44 -55 ~ +150
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC
Thermal Resistance,Junction to...
