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WFD4N60 - N-Channel MOSFET

Key Features

  • Low Intrinsic Capacitances .
  • Excellent Switching Characteristics .
  • Extended Safe Operating Area .
  • Unrivalled Gate Charge : 15 nC (Typ. ).
  • BVDSS=600V,ID=4A.
  • Lower RDS(on) : 2.5Ω (Max) @VG=10V.
  • 100% Avalanche Tested     TO‐252          TO‐251    G‐Gate,D‐Drain,S‐Sourse    Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=.

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Datasheet Details

Part number WFD4N60
Manufacturer Wisdom technologies
File Size 643.70 KB
Description N-Channel MOSFET
Datasheet download datasheet WFD4N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.