WFD4N65S - Power MOSFET

Winsemi

General Description

650V Super-Junction Power MOSFET

Key Features

Ultra low Rdson.
Ultra low gate charge (typ. Qg =13nC).
100% UIS tested.
RoHS compliant General.

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WFD4N65S power mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFD4N65S
Manufacturer	Winsemi
File Size	167.77 KB
Description	Power MOSFET
Datasheet	WFD4N65S Datasheet

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WFD4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.