Datasheet4U Logo Datasheet4U.com

WFD5N50 - Silicon N-Channel MOSFET

General Description

This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics.

Key Features

  • 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 32nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General.

📥 Download Datasheet

Datasheet Details

Part number WFD5N50
Manufacturer Winsemi
File Size 739.29 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFD5N50 Datasheet

Other Datasheets by Winsemi

Part Number Description
WFD5N60B Silicon N-Channel MOSFET
WFD5N65L Silicon N-Channel MOSFET
WFD20N06 Silicon N-Channel MOSFET
WFD2N60B Silicon N-Channel MOSFET
WFD4N60 Power MOSFET
WFD4N60B Power MOSFET
WFD4N65S Power MOSFET
WFD7N65L Silicon N-Channel MOSFET
WFD7N65LFC Silicon N-Channel MOSFET
WFD7N65S Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics. This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.