WFD20N06
Features
- 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V
- Ultra-low Gate Charge(Typical 6.1n C)
- High Current Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
V DSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃) ID
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed tp=10us
VGS Gate to Source Voltage-Continuous
VGS Gate to Source Voltage-Non-Repetitive(tp<10us)
EAS Single Pulsed Avalanche Energy
Is Source Current (Body Diode)
PD Total Power Dissipation(@Tc=25℃)
TJ, Tstg
Junction...
