WFD4N60B - Power MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.

Key Features

4A,600V. RDS(on)(Max 2.4Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 16nC).
Fast Switching Capability.
100%Avalanche Tested.
Isolation Voltage ( VISO = 4000V AC ).
Maximum Junction Temperature Range(150℃) General.

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WFD4N60B power mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFD4N60B
Manufacturer	Winsemi
File Size	506.08 KB
Description	Power MOSFET
Datasheet	WFD4N60B Datasheet

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Full PDF Text Transcription (Reference)

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WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a electronic lamp ballast.