WFD4N60
Features
- 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 16n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage ( VISO = 4000V AC )
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology. This latest technology has Been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃) PD
Derating Factor above...
