WFD7N65L
Description
Silicon N-Channel MOSFET
Features
- 7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 21n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Improved dv/dt capability
General Description
This Power MOSFET is produced using advanced planar stripe,VDMOS technology. This technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS EAS EAR IAR dv/dt PD TJ,Tstg TL
Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Avalanche Current Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage Temperature...
