WFD7N65LFC
Description
Silicon N-Channel MOSFET
Features
- 650V, 7A
- RDS(ON) = 1.3Ω (Max.) @ VGS = 10V, ID = 3.5A
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS and Halogen-Free pliant
Application
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
Package
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS VGSS ID IDM PD EAS RθJC RθJA TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current note5 Pulsed Drain Current note3 Power Dissipation note2 Single Pulse Avalanche Energy note3.6
TC = 25℃ TC = 25℃
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient note1,4
Operating and Storage Temperature Range
Max.
650 ± 30
7 28 89 486 1.4 62.5 -55 to +150
Units
V V A A W m J ℃/W ℃/W ℃
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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