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SSM6K30FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Π-MOS VII)
SSM6K30FE
○ High-speed switching ○ DC-DC Converter
Unit: mm
• Small package • Low RDS (ON): RDS(ON) = 210 mΩ (max) (@VGS = 10 V)
: R DS(ON) = 420 mΩ (max) (@VGS = 4 V) • High-speed switching: ton = 19 ns (typ.)
: toff = 10 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage
Symbol
VDS VGSS
Rating
Unit
20
V
±20
V
1,2,5,6: Drain 3: Gate 4: Source
Drain current
Drain power dissipation Channel temperature Storage temperature
DC Pulse
ID
1.2
A
IDP
2.4
PD (Note 1)
500
mW
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-2N1J
Note: Using continuously under heavy loads (e.g. the application of
Weight: 3 mg (typ.
SSM6K30FE Datasheet
