Order code VDS RDS(on) max. SCTW90N65G2V 650 V 24 mΩ
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic b.

* Switching applications
* Power supply for renewable energy systems
* High frequency DC-DC converters AM01.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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