Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitan.

* Switching mode power supply
* DC-DC converters
* Industrial motor control G(1) S(3) AM01475v1_noZen Des.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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