SCTW60N120G2 mosfet equivalent, silicon carbide power mosfet.
Order code
VDS
RDS(on) max.
ID
SCTW60N120G2
1200 V
52 mΩ
60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitan.
* Switching mode power supply
* DC-DC converters
* Industrial motor control
G(1) S(3)
AM01475v1_noZen
Des.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
Image gallery
TAGS