logo

SCTW60N120G2 Datasheet, STMicroelectronics

SCTW60N120G2 mosfet equivalent, silicon carbide power mosfet.

SCTW60N120G2 Avg. rating / M : 1.0 rating-11

datasheet Download

SCTW60N120G2 Datasheet

Features and benefits

Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitan.

Application


* Switching mode power supply
* DC-DC converters
* Industrial motor control G(1) S(3) AM01475v1_noZen Des.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

Image gallery

SCTW60N120G2 Page 1 SCTW60N120G2 Page 2 SCTW60N120G2 Page 3

TAGS

SCTW60N120G2
Silicon
carbide
Power
MOSFET
SCTW60N120G2AG
SCTW100N120G2AG
SCTW100N65G2AG
STMicroelectronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts