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SCTW40N120G2V Datasheet, STMicroelectronics

SCTW40N120G2V mosfet equivalent, silicon carbide power mosfet.

SCTW40N120G2V Avg. rating / M : 1.0 rating-11

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SCTW40N120G2V Datasheet

Features and benefits

Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacita.

Application


* Switching mode power supply
* DC-DC converters
* Industrial motor control G(1) S(3) AM01475v1_noZen Des.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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TAGS

SCTW40N120G2V
Silicon
carbide
Power
MOSFET
SCTW40N120G2VAG
SCTW100N120G2AG
SCTW100N65G2AG
STMicroelectronics

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