SCTW40N120G2VAG Datasheet, STMicroelectronics

Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extrem.

* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC) G(1) S(3) AM0147.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .