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SCTW40N120G2VAG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

  • Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1.
  • AEC-Q101 qualified.
  • Very fast and robust intrinsic body diode.
  • Extremely low gate charge and input capacitance.
  • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB).

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SCTW40N120G2VAG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package Features Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1 • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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