SCTW40N120G2V Datasheet PDF (Silicon carbide Power MOSFET) | Download STMicroelectronics SCTW40N120G2V

SCTW40N120G2V - Silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

Datasheet Details

Part number	SCTW40N120G2V
Manufacturer	STMicroelectronics
File Size	199.05 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW40N120G2V Datasheet
Additional preview pages of the SCTW40N120G2V datasheet.

📁 Similar Datasheet

SCT-013-000 - Transformer (XiDi Technology)

SCT-013-000V - Split core current transformer (YHDC)

SCT-013-005 - Transformer (YHDC)

SCT-013-010 - Transformer (YHDC)

SCT-013-015 - Transformer (YHDC)

SCT-013-020 - Transformer (YHDC)

SCT-013-025 - Split core current transformer (YHDC)

SCT-013-030 - Transformer (XiDi Technology)

SCT-013-050 - Split core current transformer (YHDC)

SCT-013-060 - Split core current transformer (YHDC)

Full PDF Text Transcription

Click to expand full text

SCTW40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package HiP247 3 2 1 D(2, TAB) Features Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Published: Jun 26, 2023 |