SCTW35N65G2VAG Datasheet PDF (Automotive-grade silicon carbide Power MOSFET) | Download STMicroelectronics SCTW35N65G2VAG

SCTW35N65G2VAG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Low capacitance.

Datasheet Details

Part number	SCTW35N65G2VAG
Manufacturer	STMicroelectronics
File Size	201.38 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW35N65G2VAG Datasheet
Additional preview pages of the SCTW35N65G2VAG datasheet.

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Full PDF Text Transcription

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SCTW35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package Features Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Published: Mar 1, 2023 |