SCTW35N65G2V Datasheet PDF (Silicon carbide Power MOSFET) | Download STMicroelectronics SCTW35N65G2V

SCTW35N65G2V - Silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200°C).

Datasheet Details

Part number	SCTW35N65G2V
Manufacturer	STMicroelectronics
File Size	200.35 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW35N65G2V Datasheet
Additional preview pages of the SCTW35N65G2V datasheet.

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Full PDF Text Transcription

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SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200°C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Published: Jun 26, 2023 |