SCTW60N120G2 Datasheet PDF (Silicon carbide Power MOSFET) | Download STMicroelectronics SCTW60N120G2

SCTW60N120G2 - Silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

Datasheet Details

Part number	SCTW60N120G2
Manufacturer	STMicroelectronics
File Size	196.37 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTW60N120G2 Datasheet
Additional preview pages of the SCTW60N120G2 datasheet.

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Full PDF Text Transcription

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SCTW60N120G2 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package HiP247 3 2 1 D(2, TAB) Features Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Published: Jun 26, 2023 |