SCTW35N65G2VAG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCTW35N65G2VAG
VDS 650 V
RDS(on) typ. 55 mΩ
ID 45 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
* AEC-Q101 qualified
* Very fast and robust intrinsic body d.
* Switching mode power supply
* EV chargers
* DC-DC converters
AM01475v1_noZen
Description
This silicon ca.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
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