Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* Very fast and robust intrinsic body d.

* Switching mode power supply
* EV chargers
* DC-DC converters AM01475v1_noZen Description This silicon ca.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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