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SCTW35N65G2VAG Datasheet, STMicroelectronics

SCTW35N65G2VAG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTW35N65G2VAG Avg. rating / M : 1.0 rating-11

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SCTW35N65G2VAG Datasheet

Features and benefits

Order code SCTW35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* Very fast and robust intrinsic body d.

Application


* Switching mode power supply
* EV chargers
* DC-DC converters AM01475v1_noZen Description This silicon ca.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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TAGS

SCTW35N65G2VAG
Automotive-grade
silicon
carbide
Power
MOSFET
SCTW35N65G2V
SCTW100N120G2AG
SCTW100N65G2AG
STMicroelectronics

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