SCTW100N120G2AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCTW100N120G2AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
* AEC-Q101 qualified
* High speed switching performance
* Traction for inverters
* DC-DC converters
* Solar inverters
* OBC
AM01475v1_noZen
Description
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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
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