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SCTW100N120G2AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

  • Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
  • AEC-Q101 qualified.
  • High speed switching performance.
  • Very fast and robust intrinsic body diode.
  • Low capacitances.
  • Very high operating junction temperature capability (TJ = 200 °C).

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SCTW100N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package Features Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Traction for inverters • DC-DC converters • Solar inverters • OBC AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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