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SCTW100N120G2AG Datasheet, STMicroelectronics

SCTW100N120G2AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTW100N120G2AG Avg. rating / M : 1.0 rating-12

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SCTW100N120G2AG Datasheet

Features and benefits

Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* High speed switching performance

Application


* Traction for inverters
* DC-DC converters
* Solar inverters
* OBC AM01475v1_noZen Description This s.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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TAGS

SCTW100N120G2AG
Automotive-grade
silicon
carbide
Power
MOSFET
STMicroelectronics

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