SCTW60N120G2AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCTW60N120G2AG
VDS 1200 V
RDS(on) typ. 45 mΩ
ID 52 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
* AEC-Q101 qualified
* High speed switching performance
* DC-DC converters
* Solar Inverters and renewable energy
* SMPS
* OBC
AM01475v1_noZen
Description
Thi.
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.
Image gallery
TAGS