SCTW60N120G2AG Datasheet, STMicroelectronics

Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* High speed switching performance

* DC-DC converters
* Solar Inverters and renewable energy
* SMPS
* OBC AM01475v1_noZen Description Thi.

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.

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