SCTW60N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTW60N120G2AG
Manufacturer	STMicroelectronics ↗
File Size	192.35 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTW60N120G2AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1.
AEC-Q101 qualified.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Mar 1, 2023 |