SCTW35N65G2V Datasheet, STMicroelectronics

Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitanc.

* Switching mode power supply
* DC-DC converters
* Industrial motor control Description This silicon carbid.

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .