SCTHS300N75G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code
23
SCTHS300N75G3AG
VDS 750 V
RDS(on) typ. 6.5 mΩ
ID 300 A
* AEC-Q101 qualified
1
* Very low RDS(on) over the entire temperature range
* H.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.
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