logo

SCTHS300N75G3AG Datasheet, STMicroelectronics

SCTHS300N75G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTHS300N75G3AG Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 284.68KB)

SCTHS300N75G3AG Datasheet
SCTHS300N75G3AG
Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 284.68KB)

SCTHS300N75G3AG Datasheet

Features and benefits

Order code 23 SCTHS300N75G3AG VDS 750 V RDS(on) typ. 6.5 mΩ ID 300 A
* AEC-Q101 qualified 1
* Very low RDS(on) over the entire temperature range
* H.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.

Image gallery

SCTHS300N75G3AG Page 1 SCTHS300N75G3AG Page 2 SCTHS300N75G3AG Page 3

TAGS

SCTHS300N75G3AG
Automotive-grade
silicon
carbide
Power
MOSFET
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

Related datasheet

SCTHS200N120G3AG

SCTHS250N120G3AG

SCTHS250N65G2G

SCTHS250N65G3

SCTH100N120G2-AG

SCTH100N65G2-7AG

SCTH35N65G2V-7

SCTH35N65G2V-7AG

SCTH40N120G2V-7

SCTH40N120G2V7AG

SCTH60N120G2-7

SCTH60N120G2-7AG

SCTH70N120G2V-7

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts