SCTHS200N120G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code
23
SCTHS200N120G3AG
VDS 1200 V
RDS(on) typ. 9.3 mΩ
ID 170 A
1
* AEC-Q101 qualified
*
Very low RDS(on) over the entire temperature range
.
NG3DS2PS1D4
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances.
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