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SCTHS200N120G3AG Datasheet, STMicroelectronics

SCTHS200N120G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTHS200N120G3AG Avg. rating / M : 1.0 rating-13

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SCTHS200N120G3AG Datasheet

Features and benefits

Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
.

Description

NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances.

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TAGS

SCTHS200N120G3AG
Automotive-grade
silicon
carbide
Power
MOSFET
SCTHS250N120G3AG
SCTHS250N65G2G
SCTHS250N65G3
STMicroelectronics

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