SCTH35N65G2V-7AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCTH35N65G2V-7AG
VDS 650 V
RDS(on) max. 67 mΩ
ID 45 A
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate cha.
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
* On board charger (OBC)
Description
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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
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