SCTH35N65G2V-7 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS SCTH35N65G2V-7 650 V
* Very fast and robust intrinsic body diode
* Low capacitance Applications
* Switching mode power supply
* EV ch.

Application

* Switching mode power supply
* EV chargers
* DC-DC converters RDS(on) typ. 55 mΩ ID 45 A Gate (1) Driver.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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