SCTH100N120G2-AG mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code SCTH100N120G2-AG
VDS 1200 V
RDS(on)typ. 30 mΩ
ID 75 A
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic .
* Traction inverters
* DC-DC converters
* Solar inverters
* OBC
Description
This silicon carbide Power M.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
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