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SCTH100N120G2-AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCTH100N120G2-AG
Manufacturer	STMicroelectronics ↗
File Size	434.83 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTH100N120G2-AG-STMicroelectronics.pdf

SCTH100N120G2-AG Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code SCTH100N120G2-AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A.
AEC-Q101 qualified.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitance.

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Published: Mar 1, 2023 |