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SCTH100N120G2-AG Datasheet, STMicroelectronics

SCTH100N120G2-AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTH100N120G2-AG Avg. rating / M : 1.0 rating-18

datasheet Download (Size : 434.83KB)

SCTH100N120G2-AG Datasheet
SCTH100N120G2-AG
Avg. rating / M : 1.0 rating-18

datasheet Download (Size : 434.83KB)

SCTH100N120G2-AG Datasheet

Features and benefits

Order code SCTH100N120G2-AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic .

Application


* Traction inverters
* DC-DC converters
* Solar inverters
* OBC Description This silicon carbide Power M.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

Image gallery

SCTH100N120G2-AG Page 1 SCTH100N120G2-AG Page 2 SCTH100N120G2-AG Page 3

TAGS

SCTH100N120G2-AG
Automotive-grade
silicon
carbide
Power
MOSFET
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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