SCTH60N120G2-7 Datasheet PDF (Silicon carbide Power MOSFET) | Download STMicroelectronics SCTH60N120G2-7

SCTH60N120G2-7 - Silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

Datasheet Details

Part number	SCTH60N120G2-7
Manufacturer	STMicroelectronics
File Size	348.56 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH60N120G2-7 Datasheet
Additional preview pages of the SCTH60N120G2-7 datasheet.

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Full PDF Text Transcription

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SCTH60N120G2-7 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Published: Jun 26, 2023 |