SCTH40N120G2V-7 Datasheet PDF (Silicon carbide Power MOSFET) | Download STMicroelectronics SCTH40N120G2V-7

SCTH40N120G2V-7 - Silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A.
Very high operating junction temperature capability (TJ = 175 °C).
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source Kelvin pin for increased efficiency Gate (1) Driver source (2) Drain (TAB).

Datasheet Details

Part number	SCTH40N120G2V-7
Manufacturer	STMicroelectronics
File Size	364.24 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH40N120G2V-7 Datasheet
Additional preview pages of the SCTH40N120G2V-7 datasheet.

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Full PDF Text Transcription

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SCTH40N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Features Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source Kelvin pin for increased efficiency Gate (1) Driver source (2) Drain (TAB) Applications • Switching mode power supply • DC-DC converters • Industrial motor control Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Published: Jun 26, 2023 |