SCTH40N120G2V-7 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. ID SCTH40N120G2V-7 1200 V 100 mΩ 36 A
* Very high operating junction temperature capability (TJ = 175 °C)
* Very fast and rob.

Application

* Switching mode power supply
* DC-DC converters
* Industrial motor control Power source (3, 4, 5, 6, 7) N-.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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