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SCTH60N120G2-7 Datasheet, STMicroelectronics

SCTH60N120G2-7 mosfet equivalent, silicon carbide power mosfet.

SCTH60N120G2-7 Avg. rating / M : 1.0 rating-13

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SCTH60N120G2-7 Datasheet

Features and benefits

Order code VDS RDS(on) max. ID SCTH60N120G2-7 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacit.

Application


* Switching mode power supply
* DC-DC converters
* Industrial motor control Description This silicon carbid.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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TAGS

SCTH60N120G2-7
Silicon
carbide
Power
MOSFET
STMicroelectronics

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