SCTHS250N120G3AG datasheet, mosfet equivalent, STMicroelectronics

SCTHS250N120G3AG mosfet equivalent, automotive-grade silicon carbide power mosfet.

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Features and benefits

Order code 23 SCTHS250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ ID 239 A 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
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Description

NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances.

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