Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A
* AEC-Q101 qualified 1
* Very fast and robust intrinsic body diode
* Extremely l.

* Main inverter (electric traction)
* DC/DC converter for EV/HEV NG3DS2PS1D4 Description This silicon carbide .

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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