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SCTHS250N65G2G Datasheet, STMicroelectronics

SCTHS250N65G2G mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTHS250N65G2G Avg. rating / M : 1.0 rating-11

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SCTHS250N65G2G Datasheet

Features and benefits

Order code 23 SCTHS250N65G2G VDS 650 V RDS(on) typ. 8.0 mΩ ID 250 A
* AEC-Q101 qualified 1
* Very fast and robust intrinsic body diode
* Extremely l.

Application


* Main inverter (electric traction)
* DC/DC converter for EV/HEV NG3DS2PS1D4 Description This silicon carbide .

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .

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TAGS

SCTHS250N65G2G
Automotive-grade
silicon
carbide
Power
MOSFET
SCTHS250N65G3
SCTHS250N120G3AG
SCTHS200N120G3AG
STMicroelectronics

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