SCTHS250N65G2G mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order code
23
SCTHS250N65G2G
VDS 650 V
RDS(on) typ. 8.0 mΩ
ID 250 A
* AEC-Q101 qualified
1
* Very fast and robust intrinsic body diode
* Extremely l.
* Main inverter (electric traction)
* DC/DC converter for EV/HEV
NG3DS2PS1D4
Description
This silicon carbide .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
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