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SCTHS250N65G3 Datasheet, STMicroelectronics

SCTHS250N65G3 mosfet equivalent, automotive-grade silicon carbide power mosfet.

SCTHS250N65G3 Avg. rating / M : 1.0 rating-11

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SCTHS250N65G3 Datasheet

Features and benefits

Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1
* AEC-Q101 qualified
* Very low RDS(on) over the entire tem.

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.

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TAGS

SCTHS250N65G3
Automotive-grade
silicon
carbide
Power
MOSFET
SCTHS250N65G2G
SCTHS250N120G3AG
SCTHS200N120G3AG
STMicroelectronics

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