SCTHS250N65G3 mosfet equivalent, automotive-grade silicon carbide power mosfet.
Order codes
VDS
RDS(on) typ.
ID
23
SCTHS250N65G3AG
650 V
6.7 mΩ
237 A
SCTHS250N65G3TAG
1
* AEC-Q101 qualified
*
Very low RDS(on) over the entire tem.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high.
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