SCTHS200N120G3AG Datasheet PDF (Automotive-grade silicon carbide Power MOSFET) | Download STMicroelectronics SCTHS200N120G3AG

SCTHS200N120G3AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency.

Datasheet Details

Part number	SCTHS200N120G3AG
Manufacturer	STMicroelectronics
File Size	337.44 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTHS200N120G3AG Datasheet
Additional preview pages of the SCTHS200N120G3AG datasheet.

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Full PDF Text Transcription

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SCTHS200N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) Driver source(2) Power source(1) Features Order code 23 SCTHS200N120G3AG VDS 1200 V RDS(on) typ. 9.3 mΩ ID 170 A 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Application • Main inverter (electric traction) Description NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Published: Feb 18, 2023 |