SCTHS250N65G3 Datasheet PDF (Automotive-grade silicon carbide Power MOSFET) | Download STMicroelectronics SCTHS250N65G3

SCTHS250N65G3 - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1.
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency.

Datasheet Details

Part number	SCTHS250N65G3
Manufacturer	STMicroelectronics
File Size	568.29 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTHS250N65G3 Datasheet
Additional preview pages of the SCTHS250N65G3 datasheet.

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Full PDF Text Transcription

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SCTHS250N65G3 Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(3) Driver source(2) Power source(1) Features Order codes VDS RDS(on) typ. ID 23 SCTHS250N65G3AG 650 V 6.7 mΩ 237 A SCTHS250N65G3TAG 1 • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Application • Main inverter (electric traction) NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Published: Mar 1, 2023 |